PART |
Description |
Maker |
SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
SSM5H01TU-14 |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
1SS369 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
1SS392 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
1SS294 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
DSR07S30U |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
SCS0240DF SCS0240DF-15 |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
|
RB551V-30 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
SB160M-40 |
Silicon Epitaxial Planer Schottky Barrier Diode
|
SEMTECH ELECTRONICS LTD.
|